Who is/are the founder/founders of transistor?
2 answers:
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Answer:
a) 42.08 ft/sec
b) 3366.33 ft³/sec
c) 0.235
d) 18.225 ft
e) 3.80 ft
Explanation:
Given:
b = 80ft
y1 = 1 ft
y2 = 10ft
a) Let's take the formula:
1 + 8f² = (20+1)²
= 8f² = 440
f² = 55
f = 7.416
For velocity of the faster moving flow, we have :
V1 = 42.08 ft/sec
b) the flow rate will be calculated as
Q = VA
VA = V1 * b *y1
= 42.08 * 80 * 1
= 3366.66 ft³/sec
c) The Froude number of the sub-critical flow.
V2.A2 = 3366.66
Where A2 = 80ft * 10ft
Solving for V2, we have:
= 4.208 ft/sec
Froude number, F2 =
F2 = 0.235
d)
= 18.225ft
e) for critical depth, we use :
= 3.80 ft
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
>
because
> Vt.
- By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.