Answer:
As nouns the difference between impression and imprint
is that impression is the indentation or depression made by the pressure of one object on or into another while imprint is an impression; the mark left behind by printing something.
Missing question:
A. [3.40 mol Fe2O3 (s) × 26.3 kJ/1 mol Fe2O3 (s)] / 2
<span>B. 3.40 mol Fe2O3 (s) × 26.3 kJ/1 mol Fe2O3 (s) </span>
<span>C. 26.3 kJ/1 mol Fe2O3 (s) / 3.40 mol Fe2O3 (s) </span>
<span>D. 26.3 kJ/1 mol Fe2O3 (s) – 3.40 mol Fe2O3 (s).
</span>Answer is: B.
Chemical reaction: F<span>e</span>₂O₃<span>(s) + 3CO(g) → 2Fe(s) + 3CO</span>₂<span>(g);</span>ΔH = <span>+ 26.3 kJ.
When one mole of iron(III) oxide reacts 26,3 kJ of energy is required and for 3,2 moles of iron(III) oxide 3,2 times more energy is required.</span>
Answer:
d an attraction between positive ions and electrons
Answer:
5 moles of electrons
Explanation:
The balance equation is as follow,
<span> 5 Ag</span>⁺ + Mn⁺²<span> + 4 H</span>₂O →<span> 5 Ag + MnO</span>₄⁻<span> + 8 H</span>⁺
Reduction of Ag:
Ag⁺ + 1 e⁻ → Ag
Or,
5 Ag⁺ + 5 e⁻ → 5 Ag
Oxidation of Mn:
Mn⁺² → MnO₄⁻ + 5 e⁻
Result:
Hence 5 moles of Ag⁺ accepts 5 electrons from 1 mole of Mn⁺².
Answer is: coefficient is one.
Chemical reaction: SiO₂ + 4HF → SiF₄ + 2H₂O.
Reaction is balanced when there are equal numbers of elements in both side of the chemical reaction.
HF - hydrofluoric acid, <span>highly corrosive, dissolves many materials.</span>
SiF₄ - silicon tetrafluoride.
