Answer:
Made of Silicon.
Explanation:
A diode is a semiconductor device use in mostly electronic appliances. It is two terminals device consisting of a P-N junction formed either in Germanium or silicon crystal.
Diode can be forward biased or reverse biased.
When a diode is forward biased and the applied voltage is increased from zero, hardly any current flows through the device in the beginning.
It is so because the external voltage is being opposed by the internal barrier voltage whose value is 0.7v for silicon and 0.3v for germanium.
If you measure 0.7 V across a diode, the diode is probably therefore made of Silicon.
Answer: Rupture strength
Explanation: Rupture strength is the strength of a material that is bearable till the point before the breakage by the tensile strength applied on it. This term is mentioned when there is a sort of deformation in the material due to tension.So, rupture will occur before whenever there are chances of failing and the material is still able to bear stresses before failing.
Answer:
a) 5.2 kPa
b) 49.3%
Explanation:
Given data:
Thermal efficiency ( л ) = 56.9% = 0.569
minimum pressure ( P1 ) = 100 kpa
<u>a) Determine the pressure at inlet to expansion process</u>
P2 = ?
r = 1.4
efficiency = 1 - [ 1 / (rp)
]
0.569 = 1 - [ 1 / (rp)^0.4/1.4
1 - 0.569 = 1 / (rp)^0.285
∴ (rp)^0.285 = 0.431
rp = 0.0522
note : rp = P2 / P1
therefore P2 = rp * P1 = 0.0522 * 100 kpa
= 5.2 kPa
b) Thermal efficiency
Л = 1 - [ 1 / ( 10.9 )^0.285 ]
= 0.493 = 49.3%
Answer: c) 450 kPa
Explanation:
Boyle's Law: This law states that pressure is inversely proportional to the volume of the gas at constant temperature and number of moles.
(At constant temperature and number of moles)
where,
= initial pressure of gas = 150 kPa
= final pressure of gas = ?
= initial volume of gas = v L
= final volume of gas = 
Therefore, the new pressure of the gas will be 450 kPa.
