Answer: Option A is correct -- 2.6 at% Pb and 97.4 at% Sn.
Explanation:
Option A is the only correct option -- 2.6 at% Pb and 97.4 at% Sn. While option B, which is 7.6 at% Pb and 92.4 at% Sn. and option C, which is 97.4 at% Pb and 2.6 at% Sn. and option D, which is 92.4 at% Pb and 7.6 at% Sn. are wrong.
Answer:
So the fraction of proeutectoid cementite is 44.3%
Explanation:
Given that
cast iron with 0.35 % wtC and we have to find out fraction of proeutectoid cementite phase when cooled from 1500 C to room temperature.
We know that
Fraction of proeutectoid cementite phase gievn as

Now by putting the values


So the fraction of proeutectoid cementite is 44.3%
Answer:
The electric field to balance the weight is approximately equals to 3.49x10^5 Newton/Coulumb
Explanation:
In order to be stationary position, magnitude of the total force due to electric field should be equal to the gravitational force that is, 
where

where <em>q</em> is the charge of the droplet and E is the electric field. On the other hand

where <em>m</em>,<em>V ,d</em> and<em> r</em> are the mass, volume, density and radius of the oil droplet respectively and <em>g </em>is the gravitational acceleration (g=9,80665 m/sn^2). By using the first equation and solving it for the electric field we can write,

(Note: d=0.85 x 10^-3 kg/cm^3 and the unit of electric field is Newton per coulumb (N/C))
Answer:
- #include <iostream>
- using namespace std;
- void printLarger(int a, int b){
-
- if(a > b){
- cout<<a;
- }else{
- cout<<b;
- }
- }
- int main()
- {
- printLarger(4, 5);
- return 0;
- }
Explanation:
The solution code is written in C++.
Firstly define a function printLarger that has two parameters, a and b with both of them are integer type (Line 5). In the function, create an if condition to check if a bigger than b, print a to terminal (Line 7-8). Otherwise print b (Line 9-10).
In the main program, test the function by passing 4 and 5 as arguments (Line 16) and we shall get 5 printed.
Photo-lithography is the method of giving geometric shapes on a mask to the surface of a silicon wafer.
<u>Explanation:</u>
The fabrication of an integrated circuit (IC) requires a variety of physical and chemical processes conducted on a semiconductor (e.g., silicon) substrate. In common, the numerous methods used to create an IC fall into three divisions: film deposition, patterning, and semiconductor doping.
Films from both conductors (such as polysilicon, aluminum, and extended recently copper) and nonconductors (various forms of silicon dioxide, silicon nitride, and others) are utilized to combine and separate transistors and their parts.
Selective doping of different regions of silicon permits the conductivity of the silicon to be altered with the application of voltage. By building structures of these various parts millions of transistors can be assembled and wired together to form the complex circuitry of a modern microelectronic device.
Fundamental to all of these methods is lithography, i.e., the development of three-dimensional relief images on the substrate for subsequent transfer of the model to the substrate.