N2 = 3*n1
T2 = 2*T1
V1 = V2

(n2 * T2)/P2 = (n1 * T1)/P1
3 n1 * 2 T1 / P2 = n1 *T1 / P1
P2 = 6*P1

Since P2 is 6P1, it is 6 times greater than original pressure

3 0

4 years ago

Assume a rectangular strip of a material with an electron density of n=5.8x1020 cm-3. The strip is 8 mm wide and 0.8 mm thick an

vampirchik [111]

Answer: I = 111.69 pA

Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.

The hall voltage of a semiconductor sensor is given below as

V = I×B/qnd

Where V = hall voltage = 1.5mV =1.5/1000=0.0015V

I = current =?,

n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3

q = magnitude of an electronic charge=1.609×10^-19c

B = strength of magnetic field = 5T

d = thickness of sensor = 0.8mm = 0.0008m

By slotting in the parameters, we have that

0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008

0.0015 = I×5/7.446×10^-8

I = (0.0015 × 7.446×10^-8)/5

I = 111.69*10^(-12)

I = 111.69 pA

3 0

3 years ago