What is required when setting up a smart phone as a WIFI hotspot?
1 answer:
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Answer:
The answer to the question is
The heat transferred in the process is -274.645 kJ
Explanation:
To solve the question, we list out the variables thus
R-134a = Tetrafluoroethane
Intitial Temperaturte t₁ = 100 °C
Initial pressure = 3.5 bar = 350 kPa
For closed system we have m₁ = m₂ = m
ΔU = m×(u₂ - u₁) = ₁Q₂ -₁W₂
For constant pressure process we have
Work done = W = = P×ΔV = P × (V₂ - V₁) = P×m×(v₂ - v₁)
From the tables we have
State 1 we have h₁ = (490.48 +489.52)/2 = 490 kJ/kg
State 2 gives h₂ = 206.75 + 0.75 × 194.57= 352.6775 kJ/kg
Therefore Q₁₂ = m×(u₂ - u₁) + W₁₂ = m × (u₂ - u₁) + P×m×(v₂ - v₁)
= m×(h₂ - h₁) = 2.0 kg × (352.6775 kJ/kg - 490 kJ/kg) =-274.645 kJ
Answer:
I = 0.625 A
Explanation:
Given that,
Power of the light bulb, P = 75 W
Voltage of the circuit, V = 120 V
We need to find the current flowing through it. We know that, Power is given by :
I is the electric current
So, the current is 0.625 A.
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
>
because
> Vt.
- By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.