Answer:
A) 282.34 - j 12.08 Ω
B) 0.0266 + j 0.621 / unit
C)
A = 0.812 < 1.09° per unit
B = 164.6 < 85.42°Ω
C = 2.061 * 10^-3 < 90.32° s
D = 0.812 < 1.09° per unit
Explanation:
Given data :
Z ( impedance ) = 0.03 i + j 0.35 Ω/km
positive sequence shunt admittance ( Y ) = j4.4*10^-6 S/km
A) calculate Zc
Zc = 
= 
= 
= 282.6 < -2.45°
hence Zc = 282.34 - j 12.08 Ω
B) Calculate gl
gl = 
d = 500
z = 0.03 i + j 0.35
y = j4.4*10^-6 S/km
gl = 
= 
= 0.622 < 87.55 °
gl = 0.0266 + j 0.621 / unit
C) exact ABCD parameters for this line
A = cos h (gl) . per unit = 0.812 < 1.09° per unit ( as calculated )
B = Zc sin h (gl) Ω = 164.6 < 85.42°Ω ( as calculated )
C = 1/Zc sin h (gl) s = 2.061 * 10^-3 < 90.32° s ( as calculated )
D = cos h (gl) . per unit = 0.812 < 1.09° per unit ( as calculated )
where : cos h (gl) = 
sin h (gl) = 
Answer:
33.56 ft^3/sec.in
Explanation:
Duration = 6 hours
drainage area = 185 mi^2
constant baseflow = 550 cfs
<u>Derive the unit hydrograph using the inverse procedure </u>
first step : calculate for the volume of direct runoff hydrograph using the details in table 2 attached below
Vdrh = sum of drh * duration
= 29700 * 6 hours ( 216000 secs )
= 641,520,000 ft^3.
next step : Calculate the volume of runoff in equivalent depth
Vdrh / Area = 641,520,000 / 185 mi^2
= 1.49 in
Finally derive the unit hydrograph
Unit of hydrograph = drh / volume of runoff in equivalent depth
= 50 ft^3 / 1.49 in = 33.56 ft^3/sec.in
A. Physical I/O sensors
Safety switches, operator inputs, travel limit switches etc
Answer:
80% of the people that were killed weren't wearing a safety flotation device ( in correct terminology Personal Flotation Device, or PFD )
Explanation:
Hence they drowned due to the lack of safety.
Answer:
Made of Silicon.
Explanation:
A diode is a semiconductor device use in mostly electronic appliances. It is two terminals device consisting of a P-N junction formed either in Germanium or silicon crystal.
Diode can be forward biased or reverse biased.
When a diode is forward biased and the applied voltage is increased from zero, hardly any current flows through the device in the beginning.
It is so because the external voltage is being opposed by the internal barrier voltage whose value is 0.7v for silicon and 0.3v for germanium.
If you measure 0.7 V across a diode, the diode is probably therefore made of Silicon.
