Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
Answer:
83,900 J
Explanation:
First, find the acceleration:
F = ma
1150 N = (1600 kg) a
a = 0.719 m/s²
Now find the final velocity.
Given:
Δx = 45.8 m
v₀ = 6.25 m/s
a = 0.719 m/s²
Find: v
v² = v₀² + 2aΔx
v² = (6.25 m/s)² + 2 (0.719 m/s²) (45.8 m)
v = 10.2 m/s
Now find the final KE:
KE = ½ mv²
KE = ½ (1600 kg) (10.2 m/s)²
KE = 83,920 J
Rounded to three significant figures, the final kinetic energy is 83,900 J.
Answer:
Y
Explanation:
Y will produce the strongest magnetic force because the current intensity is medium and it has 50 turns in the wire. the number of turns will increase the force because the magnetic field will be more concentrated.
Have a great day :)
Answer:
22.5J
Explanation:
Here the force is given. Also, the displacement is given as 30cm.
First we should check if all the values are in their standard form.
Here 30cm should be converted to metre by dividing it with 100.
Which would give us 0.3m
Now we use the equation W=force x displacement =75 x 0.3=22.5J
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