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kherson [118]
3 years ago
5

Answer the following questions, and very briefly explain your answer:

Engineering
1 answer:
alexandr1967 [171]3 years ago
5 0

Answer:

A) micro defects are left behind on the surface of metal components during the manufacturing process. These defects, in the form of micro-cracks or pits, becomes initiation sites for crack propagation or corrosion. Removing these imperfections on the surface of metal parts by electroplating greatly improves the life of metal components.

B) it will reduce fatigue crack growth.

Dispersion hardening involves the inclusion of small, hard particles in the metal, thus restricting the movement of dislocations, and thereby raising the strength properties. In dispersion hardening it is assumed that the precipitates do not deform with the matrix and that a moving dislocation bypasses the obstacles (precipitates) by moving in the clean pieces of crystal between the precipitated particles.

C) stress concentrations such as changes in section with sharp corners caused yielding, which will typically occur first at a stress concentration. For ductile materials localised plastic deformation can cause a redistribution of stress, enabling the component to continue to carry load. Brittle materials will typically fail at the stress concentration. Repeated loading may cause a fatigue crack to initiate and slowly grow at a stress concentration leading to the failure of even ductile materials. Fatigue cracks always start at stress raisers, so removing such defects increases the fatigue strength.

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3 years ago
9. To forward bias an NPN transistor, the
murzikaleks [220]

Answer:

a. the base must be more positive than the emitter

Explanation:

A transistor can be defined as a semiconductor component that is used to control the flow of voltage or current and as a gate (switch) for electronic signals. Thus, a transistor allows for the amplification, control and generation of electronic signals in a circuit. The three (3) basic parts of a transistor are; base, emitter and collector.

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Biasing of a transistor can be defined as the process of providing the controlled amount of direct current (DC) voltage or current conditions so as to enable the transistor amplify the alternating current (AC) input signal correctly.

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4 0
3 years ago
Question #1: the position…
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3 years ago
Read 2 more answers
The cross section of a heat exchanger consists of three circular pipes inside a larger pipe. The internal diameter of the three
omeli [17]

Answer:

0.0432 m^3/s

Explanation:

Internal diameter of smaller pipes = 2.5 cm = 0.025 m

pipa wall thickness = 3 mm = 0.003 m

internal diameter of larger pipes = 8 cm = 0.8 m

velocity of region between smaller and larger pipe = 10 m/s

Calculate discharge in m^3/s

First we calculate the area of the smaller pipe

A = \pi Dt = \pi ( 0.025 ) ( 0.003 )  = 0.00023571 m^2

next we calculate area of fluid between the smaller pipes and larger pipe

A = [\frac{\pi }{4} D^{2} _{L}  ] - 3(A_{s})

   = [ \frac{\pi }{4} (0.08 )^2 - 3 ( 0.00023571 )]

   = [ 0.00502857 - 0.00070713 ]

   = 0.00432144 m^2

hence the discharge in m^3/s

Q = AV

   = 0.00432144 * 10

   = 0.0432 m^3/s

3 0
3 years ago
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