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dusya [7]
3 years ago
11

One method that is used to grow nanowires (nanotubes with solid cores) is to initially deposit a small droplet of a liquid catal

yst onto a flat surface. The surface and catalyst are heated and simultaneously exposed to a higher-temperature, low-pressure gas that contains a mixture of chemical species from which the nanowire is to be formed. The catalytic liquid slowly absorbs the species from the gas through its top surface and converts these to a solid material that is deposited onto the underlying liquid-solid interface, resulting in construction of the nanowire. The liquid catalyst remains suspended at the tip of the nanowire. Consider the growth of a 15-nm-diameter silicon carbide nanowire onto a silicon carbide sururface. The surface is maintained at a temperature of Ts = 2400 K and the particular liquid catalyst that is used must be maintained in the range 2400 K ≤ Tc ≤ 3000 K to perform its function. Determine the maximum length of a nanowire that may be grown for conditions characterized by h = 105 W/m2.K and T[infinity] = 8000 KT. Assume properties of the nanowire are the same as for bulk silicon carbide.

Engineering
1 answer:
7nadin3 [17]3 years ago
4 0

Answer: maximum length of the nanowire is 510 nm

Explanation:

 

From the table of 'Thermo physical properties of selected nonmetallic solids at At T = 1500 K

Thermal conductivity of silicon carbide k = 30 W/m.K

Diameter of silicon carbide nanowire, D = 15 x 10⁻⁹ m  

lets consider the equation for the value of m

m = ( (hP/kAc)^1/2 )  = ( (4h/kD)^1/2 )  

m =  ( ((4 × 10⁵)/(30×15×10⁻⁹ ))^1/2 ) = 942809.04    

now lets find the value of h/mk    

h/mk = 10⁵ / ( 942809.04 × 30) =  0.00353

lets consider the value θ/θb by using the equation

θ/θb = (T - T∞) / (T - T∞)

θ/θb =  (3000 - 8000) / (2400 - 8000)

= 0.893

the temperature distribution at steady-state is expressed as;

θ/θb = [ cosh m(L - x) + ( h/mk) sinh m (L - x)]   / [cosh mL+  (h/mk) sinh mL]

θ/θb = [ cosh m(L - L) + ( h/mk) sinh m (L - L)]   / [cosh mL+  (h/mk) sinh mL]

θ/θb = [ 1 ]  / [cosh mL+  (h/mk) sinh mL]

so we substitute

0.893 =  [ 1 ]  / [cosh (942809.04 × L) +  (0.00353) sinh (942809.04 × L)]

L = 510 × 10⁻⁹m

L = 510 nm

therefore maximum length of the nanowire is 510 nm

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<em>solution:</em>

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                            T_allow=T_fail/F.S

                                         =120 Mpa/2.5

                                         =48 Mpa

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                               V=P

<u>Area for shear head:</u>

                              A(head)=π×d×t

                                           =π×0.04×0.075

                                           =0.003×πm^2

<u>Area for plate:</u>

                               A(plate)=π×d×t  

                                            =π×0.08×0.03

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now we have to find shear stress for both head and plate

<u>For head:</u>

                                   T_allow=V/A(head)

                                    48 Mpa=P/0.003×π                 ..(V=P)

                                             P =48 Mpa×0.003×π

                                                =452.16 KN

<u>For plate:</u>

                                   T_allow=V/A(plate)

                                    48 Mpa=P/0.0024×π                 ..(V=P)

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