Answer: Plot of 
vs 
would be linear with a slope of 4.
Explanation:
Given
Equation is 
Taking log both sides
It resembles with linear equation 
Here, slope of vs is 4.
Answer:
The kinetic energy correction factor the depends on the shape of the cross section of the pipe and the velocity distribution.
Explanation:
The kinetic energy correction factor take into account that the velocity distribution over the pipe cross section is not uniform. In that case, neither the pressure nor the temperature are involving and as we can notice, the velocity distribution depends only on the shape of the cross section.
Answer:
The answer is option
C . the JFET has a PN junction
Explanation:
Not only is option C in the question a dissimilarity between the MOSFET and the JFET we can go on with some more dissimilarities.
1.MOSFET stands for Metal Oxide Silicon Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor.
(JFET) stands for junction gate field-effect transistor (JFET)
2. JFET is a three-terminal semiconductor device, whereas MOFET a four-terminal semiconductor device.
3. In terms of areas of application of JFETs are used in low noise applications while MOSFETs, are used for high noise applications
Answer:
u_e = 9.3 * 10^-8 J / m^3 ( 2 sig. fig)
Explanation:
Given:
- Electric Field strength near earth's surface E = 145 V / m
- permittivity of free space (electric constant) e_o = 8.854 *10^-12 s^4 A^2 / m^3 kg
Find:
- How much energy is stored per cubic meter in this field?
Solution:
- The solution requires the energy density stored between earth's surface and the source of electric field strength. The formula for charge density is given by:
u_e = 0.5*e_o * E^2
- Plug in the values given:
u_e = 0.5*8.854 *10^-12 *145^2
u_e = 9.30777 * 10^-8 J/m^3
