Question

Calculate total hole mobility if the hole mobility due to lattice scattering is 50 cm2 /Vsec and the hole mobility due to ionized impurity scattering is 250 cm2 /Vsec in a given semiconductor

Answer 1

Answer:

Total hole mobility = 41.67cm²/Vsec

Explanation:

Data given;

Hole mobility due to lattice scattering = 50 cm²/V s

Hole mobility due to ionized impurity scattering = 250 cm²/V s

To calculate the total hole mobility , we use the formula;

1/u =1/uls + 1/uii

Where;

u = total mobility

uls = hole mobility due to lattice scattering

uii = hole mobility due to ionized impurity scattering

Substituting into the equation, we have

1/u = 1/50 + 1/250

1/u = 0.02 +0.004

1/u = 0.024

Cross multiplying, we have

0.024u = 1

u = 1/0.024

u = 41.67cm²/Vsec

Answer 2

Answer:

The total hole mobility is 41.67 cm²/V s

Explanation:

Data given by the exercise:

hole mobility due to lattice scattering = ul = 50 cm²/V s

hole mobility due to ionized impurity = ui = 250 cm²/V s

The total mobility is equal:

$\frac{1}{u} =\frac{1}{ul} +\frac{1}{ui} \\\frac{1}{u}=\frac{1}{50} +\frac{1}{250} \\u=41.67cm^{2} /Vs$