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KiRa [710]
3 years ago
9

6 A square silicon chip (k 150 W/m K) is of width w 5 mm on a side and of thickness t 1 mm. The chip is mounted in a substrate s

uch that its side and back surfaces are insulated, while the front surface is exposed to a coolant. If 4 W are being dissipated in circuits mounted to the back surface of the chip, what is the steady-state temperature difference between back and front surfaces
Engineering
1 answer:
bezimeni [28]3 years ago
5 0

Answer:

1.1⁰C

Explanation:

Width W = 5mm = 0.005

Thickness t = 1 mm = 0.001

K = thermal conductivity = 150W/m.K

P = q = heat transfer rate = 4W

We are to find the steady state temperature between the back and the front surface

We have to make these assumptions:

1. There is steady state conduction

2. The heat flow is of one dimension

3. The thermal conductivity is constant

4. The heat dissipation is uniform

We have:

∆t = t*P/k*W²

= (0.001m x 4W)/150x(0.005)²

= 0.004/0.00375

= 1.06667

This is approximately,

1.1⁰C

Thank you!

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Temperature T₁ = 212.4⁰ C  ; v_1 = vg_1 = 0.0996 \mathbf{m^{3}} / kg

The mass inside the cylinder is m = 0.3 kg, which is constant.

The specific internal energy u₁ = ug₁ = 2599.2 kJ/kg

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Temperature T₂ = 200⁰ C

Since the 1 - 2 occurs in an isochoric process v₂ = v₁ = 0.099 \mathbf{m^{3}} / kg

From temperature T₂ = 200⁰ C

v_f_2 = 0.0016 \ m^3/kg  

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Since  vf_2 < v_2 , the saturated pressure at state 2 i.e. P₂ = 15.5 bar

Mixture quality x_2 = \dfrac{v_2-vf_2}{vg_2 -vf_2}

x_2 = \dfrac{(0.099-0.0016)m^3/kg}{(0.127 -0.0016) m^3/kg}

x_2 = \dfrac{(0.0974)m^3/kg}{(0.1254) m^3/kg}

\mathsf{x_2 =0.78}

At temperature T₂, the specific internal energy u_f_2 = 850.6 \ kJ/kg , also ug_2 = 2594.3 \ kJ/kg

Thus,

u_2 = uf_2 + x_2 (ug_2 -uf_2)

u_2 =850.6  +0.78 (2594.3 -850.6)

u_2 =850.6  +1360.086

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<u>At state 3:</u>

Temperature T_3=T_2 = 200 ^0 C ,

V_3 = 2V_1 = 0.06 \ m^3

Specific volume v_3 = 0.2  \ m^3/kg

Thus; vg_3 =vg_2 = 0.127 \ m^3/kg ,

SInce v_3 > vg_3, therefore, the phase is in a superheated vapour state.

From the tables of superheated vapour tables; at v_3 = 0.2  \ m^3/kg and T₃ = 200⁰ C

The pressure = 10 bar and v =0.206 \ m^3/kg

The specific internal energy u_3 at the pressure of 10 bar = 2622.3 kJ/kg

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u_3-u_2

= (2622.3 - 2210.686)  kJ/kg

= 411.614 kJ/kg

≅ 410 kJ/kg  

We can see the correct sketches of the T-v plot showing the diagrammatic expression in the image attached below.

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