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Acetylene and propane
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Answer: the mass flow rate of concentrated brine out of the process is 46,666.669 kg/hr
Explanation:
F, W and B are the fresh feed, brine and total water obtained
w = 2 x 10^4 L/h
we know that
F = W + B
we substitute
F = 2 x 10^4 + B
F = 20000 + B .................EQUA 1
solute
0.035F = 0.05B
B = 0.035F/0.05
B = 0.7F
now we substitute value of B in equation 1
F = 20000 + 0.7F
0.3F = 20000
F = 20000/0.3
F = 66666.67 kg/hr
B = 0.7F
B = 0.7 * F
B = 0.7 * 66666.67
B = 46,666.669 kg/hr
the mass flow rate of concentrated brine out of the process is 46,666.669 kg/hr
Answer:
The radius of a wind turbine is 691.1 ft
The power generation potential (PGP) scales with speed at the rate of 7.73 kW.s/m
Explanation:
Given;
power generation potential (PGP) = 1000 kW
Wind speed = 5 mph = 2.2352 m/s
Density of air = 0.0796 lbm/ft³ = 1.275 kg/m³
Radius of the wind turbine r = ?
Wind energy per unit mass of air, e = E/m = 0.5 v² = (0.5)(2.2352)²
Wind energy per unit mass of air = 2.517 J/kg
PGP = mass flow rate * energy per unit mass
PGP = ρ*A*V*e
![PGP = \rho *\frac{\pi r^2}{2} *V*e \\\\r^2 = \frac{2*PGP}{\rho*\pi *V*e} , r=\sqrt{ \frac{2*PGP}{\rho*\pi *V*e}} = \sqrt{ \frac{2*10^6}{1.275*\pi *2.235*2.517}}](https://tex.z-dn.net/?f=PGP%20%3D%20%5Crho%20%2A%5Cfrac%7B%5Cpi%20r%5E2%7D%7B2%7D%20%2AV%2Ae%20%20%5C%5C%5C%5Cr%5E2%20%3D%20%5Cfrac%7B2%2APGP%7D%7B%5Crho%2A%5Cpi%20%2AV%2Ae%7D%20%2C%20r%3D%5Csqrt%7B%20%5Cfrac%7B2%2APGP%7D%7B%5Crho%2A%5Cpi%20%2AV%2Ae%7D%7D%20%3D%20%5Csqrt%7B%20%5Cfrac%7B2%2A10%5E6%7D%7B1.275%2A%5Cpi%20%2A2.235%2A2.517%7D%7D)
r = 210.64 m = 691.1 ft
Thus, the radius of a wind turbine is 691.1 ft
PGP = CVᵃ
For best design of wind turbine Betz limit (c) is taken between (0.35 - 0.45)
Let C = 0.4
PGP = Cvᵃ
take log of both sides
ln(PGP) = a*ln(CV)
a = ln(PGP)/ln(CV)
a = ln(1000)/ln(0.4 *2.2352) = 7.73
The power generation potential (PGP) scales with speed at the rate of 7.73 kW.s/m
Answer:
Made of Silicon.
Explanation:
A diode is a semiconductor device use in mostly electronic appliances. It is two terminals device consisting of a P-N junction formed either in Germanium or silicon crystal.
Diode can be forward biased or reverse biased.
When a diode is forward biased and the applied voltage is increased from zero, hardly any current flows through the device in the beginning.
It is so because the external voltage is being opposed by the internal barrier voltage whose value is 0.7v for silicon and 0.3v for germanium.
If you measure 0.7 V across a diode, the diode is probably therefore made of Silicon.