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Vinvika [58]
3 years ago
14

For a p-n-p BJT with NE 7 NB 7 NC, show the dominant current components, with proper arrows, for directions in the normal active

mode. If IEp = 10 mA, IEn = 100 mA, ICp = 9.8 mA, and ICn = 1 mA, calculate the base transport factor, emitter injection efficiency, common-base current gain, common-emitter current gain, and ICBO. If the minority stored base charge is 4.9 * 10-11 C, calculate the base transit time and lifetime.

Engineering
1 answer:
Sonja [21]3 years ago
6 0

Answer:

=> base transport factor = 0.98.

=> emitter injection efficiency = 0.99.

=> common-base current gain = 0.97.

=> common-emitter current gain = 32.34.

=> ICBO = 1 × 10^-6 A.

=> base transit time = 0.325.

=> lifetime = 1.875.

Explanation:

(Kindly check the attachment for the diagram showing the dominant current components, with proper arrows, for directions in the normal active mode).

The following parameters or data are given for a p-n-p BJT with NE 7 NB 7 NC and they are: IEp = 10 mA, IEn = 100 mA, ICp = 9.8 mA, and ICn = 1 mA.

(1). The base transport factor = ICp/IEp=9.8/10 =  0.98.

(2). emitter injection efficiency =IEp/ IEp + ICn = 10/10 + 0.1 =  0.99.

(3).common-base current gain = 0.98 × 0.99 = 0.9702.

(4).common-emitter current gain =0.97 / 1- 0.97  = 32.34.

(5). Icbo = Ico = 1 × 10^-6 A.

(6). base transit time = 1248 × 10^-2 × (1.38× 10^-23/1.603 × 10^-19). = 0.325.

(7).lifetime;

= > 2 = √0.325 + √ lifetime.

= Lifetime = 2.875.

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Flauer [41]

Answer:

Using python

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num_girls = int(input("Enter number of girls :"))

budget = int(input("Enter the number of dollars spent per school year :"))

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dollarperstudent = budget/(num_boys+num_girls)

print("Dollar spent per student : "+str(dollarperstudent))#final result

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3 0
3 years ago
To provide some perspective on the dimensions of atomic defects, consider a metal specimen that has a dislocation density of 105
GenaCL600 [577]

Answer:

62.14\ \text{miles}

6213727.37\ \text{miles}

Explanation:

The distance of the chain would be the product of the dislocation density and the volume of the metal.

Dislocation density = 10^5\ \text{mm}^{-2}

Volume of the metal = 1000\ \text{mm}^3

10^5\times 1000=10^8\ \text{mm}\\ =10^5\ \text{m}

1\ \text{mile}=1609.34\ \text{m}

\dfrac{10^5}{1609.34}=62.14\ \text{miles}

The chain would extend 62.14\ \text{miles}

Dislocation density = 10^{10}\ \text{mm}^{-2}

Volume of the metal = 1000\ \text{mm}^3

10^{10}\times 1000=10^{13}\ \text{mm}\\ =10^{10}\ \text{m}

\dfrac{10^{10}}{1609.34}=6213727.37\ \text{miles}

The chain would extend 6213727.37\ \text{miles}

3 0
3 years ago
The lift on a spinning circular cylinder in a freestream with a velocity of 30 m/s and at standard sea level conditions is 6 N/m
Evgesh-ka [11]

Answer:

The circulation around the cylinder is 0.163 \frac{m^{2} }{s}

Explanation:

Given :

Velocity of spinning cylinder v = 30 \frac{m}{s}

Sea level density \rho = 1.23 \frac{kg}{m^{3} }

Sea level span L = 6 \frac{N}{m}

Lift per unit circulation is given by,

  L = \rho v c

Where c = circulation around cylinder

   c = \frac{L}{\rho v}

   c = \frac{6}{1.23 \times 30}

   c = 0.163 \frac{m^{2} }{s}

Therefore, the circulation around the cylinder is 0.163 \frac{m^{2} }{s}

5 0
4 years ago
What is a smooth flow of air over a surface is called?
pochemuha

Answer:

laminar flow

Explanation:

In fluid dynamics, laminar flow is characterized by fluid particles following smooth paths in layers, with each layer moving smoothly past the adjacent layers with little or no mixing.

4 0
3 years ago
If you measure 0.7 V across a diode, the diode is probably made of
tatuchka [14]

Answer:

Made of Silicon.

Explanation:

A diode is a semiconductor device use in mostly electronic appliances. It is two terminals device consisting of a P-N junction formed either in Germanium or silicon crystal.

Diode can be forward biased or reverse biased.

When a diode is forward biased and the applied voltage is increased from zero, hardly any current flows through the device in the beginning.

It is so because the external voltage is being opposed by the internal barrier voltage whose value is 0.7v for silicon and 0.3v for germanium.

If you measure 0.7 V across a diode, the diode is probably therefore made of Silicon.

6 0
3 years ago
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