Explanation:
Styrene is a vinyl monomer in which there is a carbon carbon double bond.
The polymerization of the styrene, which is initiated by using a free radical which reacts with the styrene and the compound thus forms react again and again to form polystyrene (PS).
The equation is shown below as:
⇒ ![\begin{matrix}&C_6H_5 \\&|\\ -[-H_2C & -CH-]-_n\end{matrix}](https://tex.z-dn.net/?f=%5Cbegin%7Bmatrix%7D%26C_6H_5%20%5C%5C%26%7C%5C%5C%20-%5B-H_2C%20%26%20-CH-%5D-_n%5Cend%7Bmatrix%7D)
Answer:
MOXIE is designed to generate up to 10 grams of oxygen per hour. This technology demonstration was designed to ensure the instrument survived the launch from Earth, a nearly seven-month journey through deep space, and touchdown with Perseverance on Feb
Answer:
Recall the formula for the maximum stress, σₐ = 2σ₀ *√ (α/ρₓ)
where
σ₀ = tensile stress = 140 MPa = 1.40x 10⁸Pa
α = crack length = 3.8 × 10–2 mm = 3.8 x 10⁻⁵m
ρₓ = radius of curvature = 1.9 × 10⁻⁴mm = 1.9 × 10⁻⁷m
Substituting these values into the formula, we can calculate the max stress as
====== 2 x 1.40x 10⁸ x √(3.8 x 10⁻⁵/1.9 × 10⁻⁷)
σₐ = 24.4MPa
Answer:
A. N type impurities
B. P type impurities
Explanation:
A. The impurities contribute free electrons and changing the conducting property of the semi conductor. When a pentavalent impurities in a semi conductor( impurities with five valence electron) , the impurity atom replace some of the semi conductor atoms in the crystal structure where 4 of the valence electron would be involved in bonding of 4 neighbouring semiconductor while leaving the fifth electron to be free(negative charge carrier) which is available for detachment.
B. When a trivalence impurity is added to semiconductor, instead of excess electron, there will be excess hole created by crystals. Reason for this attribute is the trivalence atom will replace some tetra valence semiconductor atom, when three valence electrons of the 3 valence electrons of the trivalent impurity atom make bond with three neighbouring semiconductor which gives rise to lack of electron in the bond of the fourth neighbouring semiconductor which contribute a whole to the crystalline since trivalent impurity contribute excess holes to the crystal of semi conductor, this holes can accept electrons.
