Current flow in a semiconductor arises from the motion of charge carriers in both the conduction and valence bands. As explained in chapter 4, the mobile charges in the conduction band are electrons and those in the valence band are holes.
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The maximum shear stress in the tube when the power is transmitted through a 4: 1 gearing is 28.98 MPa.
<h3>What is power?</h3>
Power is the energy transferred per unit time.
Torque is find out by
P = 2πNT/60
10000 = 2π x 2000 x T / 60
T =47.74 N.m
The gear ratio Ne / Ns =4/1
Ns =2000/4 = 500
Ts =Ps x 60/(2π x 500)
Ts =190.96 N.m
Maximum shear stress τ = 16/π x (T / (d₀⁴ - d₁⁴))
τ max =T/J x D/2
where d₁ = 30mm = 0.03 m
d₀ = 30 +(2x 4) = 38mm =0.038 m
Substitute the values into the equation, we get
τ max = 16 x 190.96 x 0.038 /π x (0.038⁴ - 0.03⁴)
τ max = 28.98 MPa.
Thus, the maximum shear stress in the tube is 28.98 MPa.
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