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BlackZzzverrR [31]
4 years ago
13

Which of the following has led to a safer and more prosperous global community within the last century? the Bronze Age composite

materials new materials ceramics
Engineering
2 answers:
sattari [20]4 years ago
4 0

Answer:

The bronze age

musickatia [10]4 years ago
4 0

Answer:

C.

Explanation:

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Is 4/16 equal in measurement to 1/4
Alja [10]

Answer:yes

Explanation:

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Which of the following does a finding of no significant impact (FONSI) negate the need for?
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4 environmental accessment
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Rsidential Solar Solution:a. A type of photovoltaic solar panel manufactured in China receives a rating of 250W. The rating proc
aksik [14]

Answer:

a) \eta = 13.455\%, b) E_{day} = 812.716\,kJ, c) C_{month. total} = 19.505\, USD, d) t = 40.588\,years

Explanation:

a) The area of the solar panel is:

A = (20\,ft^{2})\cdot (\frac{0.3048\,m}{1\,ft} )^{2}

A = 1.858\,m^{2}

The energy potential is determined herein:

\dot E_{o} = (1000\,\frac{W}{m^{2}} )\cdot (1.858\,m^{2})

\dot E_{o} = 1858\,W

The efficiency of the solar panel is:

\eta = \frac{\dot E}{\dot E_{o}}\times 100\%

\eta = \frac{250\,W}{1858\,W}\times 100\%

\eta = 13.455\%

b) The energy generated by the solar panel is presented below:

E_{day} = (0.135)\cdot (150\,\frac{W}{m^{2}} )\cdot (20\,ft^{2})\cdot \left(\frac{0.3048\,m}{1\,ft} \right)^{2}\cdot (6\,h)\cdot (\frac{3600\,s}{1\,h} )\cdot (\frac{1\,kJ}{1000\,J} )

E_{day} = 812.716\,kJ

c) The energy generated per month and per panel is:

E_{month} = 30\cdot E_{day}

E_{month} = 30 \cdot (812.716\,kJ)\cdot \left(\frac{1\,kWh}{3600\,kJ}  \right)

E_{month} = 6.773\,kWh

Monthly energy savings due to the use of 18 panels are:

C_{month, total} = 18\cdot E_{month}\cdot c

C_{month, total} = 18\cdot (6.773\,kWh)\cdot (\frac{0.16\,USD}{1\,kWh} )

C_{month. total} = 19.505\, USD

d) The payback of the solar energy system is:

t = \frac{9500\,USD}{12\cdot (19.505\,USD)}

t = 40.588\,years

6 0
3 years ago
What is the<br> engineering
Oliga [24]

<em>Engineering</em><em> </em><em>is</em><em> </em><em>the</em><em> </em><em>profession</em><em> </em><em>which</em><em> </em><em>deals </em><em>with</em><em> </em><em>building</em><em> </em><em>the</em><em> </em><em>structures</em><em> </em><em>like</em><em> </em><em>bridge</em><em>,</em><em>house</em><em>,</em><em>roads</em><em> </em><em>etc</em><em>.</em>

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8 0
3 years ago
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Write equations used to calculate the diode reverse saturation current, the voltage at which diode goes into resistive behavior,
laiz [17]

Answer:

Diode equation for reverse saturation current

I_o = A\times e^{\frac{-Eg}{KT}} + B\times e^{\frac{-Eg}{2KT}}  

Voltage at which diode goes into Resistive region:V=-5 volts

Voltage at which high level injection occurs:Va=0.55 volt

Voltage at which avalanche multiplication occurs:V=5volts

Explanation:

we take here forward and reverse 0.7 volt and -5 volt  

As Diode current equation is express as

I_D = I_o \times (e^{\frac{V_D}{\eta V_T}} -1 )   ....................1

here I_D is total current through the diode and I_o is reverse saturated current and V_D is  voltage drop across diode and \eta is idealized factor and V_T is thermal voltage

so here we know that when Bios is forward than

V_D  = V_T     .................2

ans Bios is Reverse than  

V_D  = V_R      ..................3

so here

1.  diode reverse saturation current is express as

I_o = A\times e^{\frac{-Eg}{KT}} + B\times e^{\frac{-Eg}{2KT}}  

and

2. Voltage at which diode go into Reverse behavior will be

V_D  = V_R    = -5 volt

and

3. voltage at which high level injection occur that is

Va = 0.55 volt

and

4. voltage at which avalanche multiplication occurs is

Va = 5 volt

6 0
3 years ago
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