Answer:
increase in temperature of the intrinsic semiconductor
Explanation:
- If the p-side has a higher doping concentration, it implies that number of holes (positive ion) increased which is greater than number of electron (negative ion) in the n-side
- in order to balance the intrinsic concentration, that is to balance the number of holes and electrons which depends on temperature.
- an increase in the temperature of the intrinsic semiconductor (p-side), increases the number of electron but number of holes remains constant.
A balance in the intrinsic concentration helps in tuning to the same radio channel.
Anatomy I think it's important to know anatomy as a young adult so u are self aware of your body
I’m assuming you mean barium nitrite, Ba(NO2)2.
First convert grams of Ba(NO2)2 to moles using the molar mass of Ba(NO2)2. Then use the mole ratio of 4 moles of oxygen per 1 mole of Ba(NO2)2 to convert to moles of oxygen. Then use the molar mass of oxygen to convert to grams of oxygen.
45.7 g Ba(NO2)2 • 1 mol Ba(NO2)2 / 229.35 g Ba(NO2)2 • 4 mol O / 1 mol Ba(NO2)2 • 16.0 g O / 1 mol O = 12.8 g oxygen
6.4*10^10 is the answer in scientific notation
