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gulaghasi [49]
3 years ago
5

Π/4 = 1 - 1/3 + 1/5 - 1/7 + 1/9 ...

Engineering
1 answer:
leva [86]3 years ago
6 0

Answer: Pi= 4 - 4/3 + 4/5 - 4/7 + 4/9 ...

Explanation:

Is the same as the example,

If Π/4 = 1 - 1/3 + 1/5 - 1/7 + 1/9 ...

Then

(Π/4 )*4= 4*(1 - 1/3 + 1/5 - 1/7 + 1/9 ...)

Π =4 - 4/3 + 4/5 - 4/7 + 4/9 ...

The way to write this is

Sum(from n=0 to n=inf) of (-1)^n 4/(2n+1)

(photo)

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Consider the following grooves, each of width W, that have been machined from a solid block of material. (a) For each case obtai
kogti [31]

Answer:A certain vehicle loses 3.5% of its value each year. If the vehicle has an initial value of $11,168, construct a model that represents the value of the vehicle after a certain number of years. Use your model to compute the value of the vehicle at the end of 6 years.

Explanation:

8 0
3 years ago
A cylindrical tank is required to contain a gage pressure 560 kPa . The tank is to be made of A516 grade 60 steel with a maximum
adoni [48]

Answer:

5.6 mm

Explanation:

Given that:

A cylindrical tank is required to contain a:

Gage Pressure P = 560 kPa

Allowable normal stress \sigma = 150 MPa = 150000 Kpa.

The inner diameter of the tank = 3 m

In a closed cylinder  there exist both the circumferential stress and the longitudinal stress.

Circumferential stress \sigma = \dfrac{pd}{2t}

Making thickness t the subject; we have

t = \dfrac{pd}{2* \sigma}

t = \dfrac{560000*3}{2*150000000}

t = 0.0056 m

t = 5.6 mm

For longitudinal stress.

\sigma = \dfrac{pd}{4t}

t= \dfrac{pd}{4*\sigma }

t = \dfrac{560000*3}{4*150000000}

t = 0.0028  mm

t = 2.8 mm

From the above circumferential stress and longitudinal stress; the stress with the higher value will be considered ; which is circumferential stress and it's minimum value  with the maximum thickness = 5.6 mm

8 0
3 years ago
Describe carbonation as it applies to the four-stroke engine.
valentinak56 [21]
Carbonation is more of a healer to the engine
5 0
3 years ago
Read 2 more answers
The hot and cold inlet temperatures to a concentric tube heat exchanger are Th,i = 200°C, Tc,i = 100°C, respectively. The outlet
alexgriva [62]

Answer:Counter,

0.799,

1.921

Explanation:

Given data

T_{h_i}=200^{\circ}C

T_{h_o}=120^{\circ}C

T_{c_i}=100^{\circ}C

T_{c_o}=125^{\circ}C

Since outlet temperature of cold liquid is greater than hot fluid outlet temperature therefore it is counter flow heat exchanger

Equating Heat exchange

m_hc_{ph}\left [ T_{h_i}-T_{h_o}\right ]=m_cc_{pc}\left [ T_{c_o}-T_{c_i}\right ]

\frac{m_hc_{ph}}{m_cc_{pc}}=\frac{125-100}{200-120}=\frac{25}{80}=C\left ( capacity rate ratio\right )

we can see that heat capacity of hot fluid is minimum

Also from energy balance

Q=UA\Delta T_m=\left ( mc_p\right )_{h}\left ( T_{h_i}-T_{h_o}\right )

NTU=\frac{UA}{\left ( mc_p\right )_{h}}=\frac{\left ( T_{h_i}-T_{h_o}\right )}{T_m}

T_m=\frac{\left ( 200-125\right )-\left ( 120-100\right )}{\ln \frac{75}{20}}

T_m=41.63^{\circ}C

NTU=1.921

And\ effectiveness \epsilon =\frac{1-exp\left ( -NTU\left ( 1-c\right )\right )}{1-c\left ( -NTU\left ( 1-c\right )\right )}

\epsilon =\frac{1-exp\left ( -1.921\left ( 1-0.3125\right )\right )}{1-0.3125exp\left ( -1.921\left ( 1-0.3125\right )\right )}

\epsilon =\frac{1-exp\left ( -1.32068\right )}{1-0.3125exp\left ( -1.32068\right )}

\epsilon =\frac{1-0.2669}{1-0.0834}

\epsilon =0.799

5 0
3 years ago
Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and lambda =0 (channel length modulation parameter)
AveGali [126]

The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.

<u>Explanation:</u>

  • Since V_{ds} > V_{gs} - Vt because V_{gs} > Vt.
  • By the saturation region the MOSFET is operating.
  • A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
  • MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
  • The core of this is integrated circuit.
  • It is fabricated and designed in an individual chips due to tiny sizes.
7 0
3 years ago
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