Solution :
Given :
Water have quality x = 0.7 (dryness fraction) at around pressure of 200 kPa
The phase diagram is provided below.
a). The phase is a standard mixture.
b). At pressure, p = 200 kPa, T = 
Temperature = 120.21°C
c). Specific volume
d). Specific energy (
)
e). Specific enthalpy 
At 
f). Enthalpy at m = 0.5 kg
= 1022.91 kJ
Answer:
The rate of heat generation in the wire per unit volume is 5.79×10^7 Btu/hrft^3
Heat flux is 9.67×10^7 Btu/hrft^2
Explanation:
Rate of heat generation = 1000 W = 1000/0.29307 = 3412.15 Btu/hr
Area (A) = πD^2/4
Diameter (D) = 0.08 inches = 0.08 in × 3.2808 ft/39.37 in = 0.0067 ft
A = 3.142×0.0067^2/4 = 3.53×10^-5 ft^2
Volume (V) = A × Length
L = 20 inches = 20 in × 3.2808 ft/39.37 in = 1.67 ft
V = 3.53×10^-5 × 1.67 = 5.8951×10^-5 ft^3
Rate of heat generation in the wire per unit volume = 3412.15 Btu/hr ÷ 5.8951×10^-5 ft^3 = 5.79×10^7 Btu/hrft^3
Heat flux = 3412.15 Btu/hr ÷ 3.53×10^-5 ft^2 = 9.67×10^7 Btu/hrft^2
Answer: 24 pA
Explanation:
As pure silicon is a semiconductor, the resistivity value is strongly dependent of temperature, as the main responsible for conductivity, the number of charge carriers (both electrons and holes) does.
Based on these considerations, we found that at room temperature, pure silicon resistivity can be approximated as 2.1. 10⁵ Ω cm.
The resistance R of a given resistor, is expressed by the following formula:
R = ρ L / A
Replacing by the values for resistivity, L and A, we have
R = 2.1. 10⁵ Ω cm. (10⁴ μm/cm). 50 μm/ 0.5 μm2
R = 2.1. 10¹¹ Ω
Assuming that we can apply Ohm´s Law, the current that would pass through this resistor for an applied voltage of 5 V, is as follows:
I = V/R = 5 V / 2.1.10¹¹ Ω = 2.38. 10⁻¹¹ A= 24 pA
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