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MCQ : What are the main the constituents of acid rains?

Engineering

2 answers:

IrinaVladis [17]3 years ago

4 0

Answer:

c is correct

Explanation:

nexus9112 [7]3 years ago

3 0

Answer:

a. Nitrogen Oxide

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Find the mathematical equation for SF distribution and BM diagram for the beam shown in figure 1.

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Answer:

i) SF: $v(x) = \frac{(w_0* x )^2}{2L}$

ii) BM : $= \frac{(w_0*x)^3}{6L}$

Explanation:

Let's take,

$\frac{y}{w_0} = \frac{x}{L}$

Making y the subject of formula, we have :

$y = \frac{x}{L} * w_0$

For shear force (SF), we have:

This is the area of the diagram.

$v(x) = \frac{1}{2} * y = \frac{1}{2} * \frac{x}{L} * w_0$

$= \frac{(w_0* x )^2}{2L}$

The shear force equation =

$v(x) = \frac{(w_0* x )^2}{2L}$

For bending moment (BM):

$BM = v(x) * \frac{x}{3}$

$= \frac{(w_0* x )^2}{2L} * \frac{x}{3}$

$= \frac{(w_0*x)^3}{6L}$

The bending moment equation =

$= \frac{(w_0*x)^3}{6L}$

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How will the delay and active power per device change as you increase the doping density of both the N- and the P-MOSFET?

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hello your question is incomplete attached below is the missing part of the question

Consider an inverter operating a power supply voltage VDD. Assume that matched condition for this inverter. Make the necessary assumptions to get to an answer for the following questions.

answer : Nd ∝ rt

Explanation:

Determine how the delay and active power per device will change as the doping density of N- and P-MOSFET increases

Pactive ( active power ) = Efs * F

Pactive = $\frac{q^2Nd^2*Xn^2}{6Eo} * f$

also note that ; Pactive ∝ Nd2 (

tD = K . $\frac{Vdd}{(Vdd - Vt )^2}$ since K = constant

Hence : Nd ∝ rt

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