Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
<span>C.
Sample C would be best, because the percentage of the energy
in an
incident wave that remains in a reflected wave from this material
is the
smallest.
The coefficient of absorption is the percentage of incident sound
that's absorbed. So the highest coefficient of absorption results in
the smallest </span><span>percentage of the energy in an
incident wave that remains.
That's what you want. </span>
Answer:
6.49 x 10^-8 N
Explanation:
formula is
F= G * ((m1 * m2)/r^2)
F = 6.67x10^-11 * ((6.8*6.8/.218)
F = 6.49 x 10^-8 Newtons
Ionic compounds is your answer. What happens is one atom donates electron(s) to the other atom, making one positive and the other negative. The opposite atoms attract, forming an ionic bond.
Hope this helps! :)
