Question

Write equations used to calculate the diode reverse saturation current, the voltage at which diode goes into resistive behavior, i.e. when voltage across the neutral base region equals the voltage across the junction, voltage at which high level injection occurs, and the voltage at which avalanche multiplication takes place.

Answer 1

Answer:

Diode equation for reverse saturation current

$I_o = A\times e^{\frac{-Eg}{KT}} + B\times e^{\frac{-Eg}{2KT}}$  

Voltage at which diode goes into Resistive region:V=-5 volts

Voltage at which high level injection occurs:Va=0.55 volt

Voltage at which avalanche multiplication occurs:V=5volts

Explanation:

we take here forward and reverse 0.7 volt and -5 volt  

As Diode current equation is express as

$I_D = I_o \times (e^{\frac{V_D}{\eta V_T}} -1 )$   ....................1

here $I_D$ is total current through the diode and $I_o$ is reverse saturated current and $V_D$ is  voltage drop across diode and $\eta$ is idealized factor and $V_T$ is thermal voltage

so here we know that when Bios is forward than

$V_D$  = $V_T$     .................2

ans Bios is Reverse than  

$V_D$  = $V_R$      ..................3

so here

1.  diode reverse saturation current is express as

$I_o = A\times e^{\frac{-Eg}{KT}} + B\times e^{\frac{-Eg}{2KT}}$  

and

2. Voltage at which diode go into Reverse behavior will be

$V_D$  = $V_R$    = -5 volt

and

3. voltage at which high level injection occur that is

Va = 0.55 volt

and

4. voltage at which avalanche multiplication occurs is

Va = 5 volt