Answer:
See explaination and attachment
Explanation:
Please kindly check attachment for the step by step solution of the given problem.
Have the solution as an attachment.
Answer:
Dude just like forget the highway and drive on the interstate bruh
Explanation:
Answer:

Explanation:
Hello,
In this case, for the inlet stream, from the steam table, the specific enthalpy and entropy are:

Next, for the liquid-vapor mixture at the outlet stream we need to compute its quality by taking into account that since the turbine is adiabatic, the entropy remains the same:

Thus, the liquid and liquid-vapor entropies are included to compute the quality:

Next, we compute the outlet enthalpy by considering the liquid and liquid-vapor enthalpies:

Then, by using the first law of thermodynamics, the maximum specific work is computed via:

Best regards.
Answer: At time 18.33 seconds it will have moved 500 meters.
Explanation:
Since the acceleration of the car is a linear function of time it can be written as a function of time as


Integrating both sides we get

Now since car starts from rest thus at time t = 0 ; v=0 thus c=0
again integrating with respect to time we get

Now let us assume that car starts from origin thus D=0
thus in the first 15 seconds it covers a distance of

Thus the remaining 125 meters will be covered with a constant speed of

in time equalling 
Thus the total time it requires equals 15+3.33 seconds
t=18.33 seconds
Answer: a) 0.24E+20 m-3. b) p-type extrinsic.
Explanation:
The current density in a semiconductor is composed by two types of charge carriers: electrons and holes.
This parameter, is proportional to the Electric field within the semiconductor, being the proportionality constant, the electrical conductivity of the material, that takes into account the charge carrier concentrations, and the mobility for each type.
The expression for electrical conductivity is as follows:
σ = q . ne . µe + q . np . µp
Replacing by the given values, and the value of q (charge of an electron), we can get the only unknown that remains, ne , as follows:
ne =( σ – (q . np . µp)) / q µe = (13 (Ω.m)-1 – (1.6E-19) coul(4.0E+20) m-3.0.18) m2/V-s /( (1.6E-19).0.38) coul.m2/V-s
ne = 0.24E+20.
As ne is smaller than np, this means that the semiconductor behaves like a p-type extrinsic one.