Many manufacturers currently offer SAE level ________

The boost converter of Fig. 6-8 has parameter Vs 20 V, D 0.6, R 12.5 , L 10 H, C 40 F, and the switching frequency is 200 kHz. (

mr Goodwill [35]

Answer:

a) the output voltage is 50 V

b)

- the average inductor current is 10 A

- the maximum inductor current is 13 A

- the maximum inductor current is 7 A

c) the output voltage ripple is 0.006 or 0.6%V₀

d) the average current in the diode under ideal components is 4 A

Explanation:

Given the data in the question;

a) the output voltage

V₀ = V $_s$ /( 1 - D )

given that; V $_s$ = 20 V, D = 0.6

we substitute

V₀ = 20 / ( 1 - 0.6 )

V₀ = 20 / 0.4

V₀ = 50 V

Therefore, the output voltage is 50 V

b)

- the average inductor current

$I_L$ = V $_s$ / ( 1 - D )²R

given that R = 12.5 Ω, V $_s$ = 20 V, D = 0.6

we substitute

$I_L$ = 20 / (( 1 - 0.6 )² × 12.5)

$I_L$ = 20 / (( 0.4)² × 12.5)

$I_L$ = 20 / ( 0.16 × 12.5 )

$I_L$ = 20 / 2

$I_L$ = 10 A

Therefore, the average inductor current is 10 A

- the maximum inductor current

$I_{Lmax$ = [V $_s$ / ( 1 - D )²R] + [ V

given that, R = 12.5 Ω, V $_s$ = 20 V, D = 0.6, L = 10 μH, T = 1/200 kHz = 5 hz

we substitute

$I_{Lmax$ = [20 / (( 1 - 0.6 )² × 12.5)] + [ (20 × 0.6 × 5) / (2 × 10) ]

$I_{Lmax$ = [20 / 2 ] + [ 60 / 20 ]

$I_{Lmax$ = 10 + 3

$I_{Lmax$ = 13 A

Therefore, the maximum inductor current is 13 A

- The minimum inductor current

$I_{Lmax$ = [V $_s$ / ( 1 - D )²R] - [ V

given that, R = 12.5 Ω, V $_s$ = 20 V, D = 0.6, L = 10 μH, T = 1/200 kHz = 5 hz

we substitute

$I_{Lmin$ = [20 / (( 1 - 0.6 )² × 12.5)] - [ (20 × 0.6 × 5) / (2 × 10) ]

$I_{Lmin$ = [20 / 2 ] -[ 60 / 20 ]

$I_{Lmin$ = 10 - 3

$I_{Lmin$ = 7 A

Therefore, the maximum inductor current is 7 A

c) the output voltage ripple

ΔV₀/V₀ = D/RCf

given that; R = 12.5 Ω, C = 40 μF = 40 × 10⁻⁶ F, D = 0.6, f = 200 Khz = 2 × 10⁵ Hz

we substitute

ΔV₀/V₀ = 0.6 / (12.5 × (40 × 10⁻⁶) × (2 × 10⁵) )

ΔV₀/V₀ = 0.6 / 100

ΔV₀/V₀ = 0.006 or 0.6%V₀

Therefore, the output voltage ripple is 0.006 or 0.6%V₀

d) the average current in the diode under ideal components;

under ideal components; diode current = output current

hence the diode current will be;

$I_D$ = V₀/R

as V₀ = 50 V and R = 12.5 Ω

we substitute

$I_D$ = 50 / 12.5

$I_D$ = 4 A

Therefore, the average current in the diode under ideal components is 4 A

7 0

3 years ago

What is a p-n junction? Show by the diagram.

Natalija [7]

Answer:

The p-n junction is a region formed when a p -type semiconductor material is joined to an n-type semiconductor material

Explanation:

The p type semiconductor has holes as its majority charge carriers making it positively charged while the n –types has an overall negative charge. At the junction the holes move towards the electron until such a time when there is a balance in charges from both materials, which leads to the formation of the depletion zone as shown in the attachment below

5 0

3 years ago

The solid cylinders AB and BC are bonded together at B and are attached to fixed supports at A and C. The modulus of rigidity is

romanna [79]

Answer:

a) 0.697*10³ lb.in

b) 6.352 ksi

Explanation:

a)

For cylinder AB:

Let Length of AB = 12 in

$c=\frac{1}{2}d=\frac{1}{2} *1.1=0.55in\\ J=\frac{\pi c^4}{2}=\frac{\pi}{2}0.55^4=0.1437\ in^4\\$

$\phi_B=\frac{T_{AB}L}{GJ}=\frac{T_{AB}*12}{3.3*10^6*0.1437} =2.53*10^{-5}T_{AB}$

For cylinder BC:

Let Length of BC = 18 in

$c=\frac{1}{2}d=\frac{1}{2} *2.2=1.1in\\ J=\frac{\pi c^4}{2}=\frac{\pi}{2}1.1^4=2.2998\ in^4\\$

$\phi_B=\frac{T_{BC}L}{GJ}=\frac{T_{BC}*18}{5.9*10^6*2.2998} =1.3266*10^{-6}T_{BC}$

$2.53*10^{-5}T_{AB}=1.3266*10^{-6}T_{BC}\\T_{BC}=19.0717T_{AB}$

$T_{AB}+T_{BC}-T=0\\T_{AB}+T_{BC}=T\\T_{AB}+T_{BC}=14*10^3\ lb.in\\but\ T_{BC}=19.0717T_{AB}\\T_{AB}+19.0717T_{AB}=14*10^3\\20.0717T_{AB}=14*10^3\\T_{AB}=0.697*10^3\ lb.in\\T_{BC}=13.302*10^3\ lb.in$