482VP I think is the correct answer.
Answer:
increase in temperature of the intrinsic semiconductor
Explanation:
- If the p-side has a higher doping concentration, it implies that number of holes (positive ion) increased which is greater than number of electron (negative ion) in the n-side
- in order to balance the intrinsic concentration, that is to balance the number of holes and electrons which depends on temperature.
- an increase in the temperature of the intrinsic semiconductor (p-side), increases the number of electron but number of holes remains constant.
A balance in the intrinsic concentration helps in tuning to the same radio channel.
Answer:
Explanation:
Given that:
The flow rate Q = 0.3 m³/s
Volume (V) = 200 m³
Initial concentration
= 2.00 ms/l
reaction rate K = 5.09 hr⁻¹
Recall that:







where;







Thus; the concentration of species in the reactant = 102.98 mg/l
b). If the plug flow reactor has the same efficiency as CSTR, Then:
![t _{PFR} = \dfrac{1}{k} \Big [ In ( \dfrac{C_o}{C_e}) \Big ]](https://tex.z-dn.net/?f=t%20_%7BPFR%7D%20%3D%20%5Cdfrac%7B1%7D%7Bk%7D%20%5CBig%20%5B%20In%20%28%20%5Cdfrac%7BC_o%7D%7BC_e%7D%29%20%5CBig%20%5D)
![\dfrac{V_{PFR}}{Q_{PFR}} = \dfrac{1}{k} \Big [ In ( \dfrac{C_o}{C_e}) \Big ]](https://tex.z-dn.net/?f=%5Cdfrac%7BV_%7BPFR%7D%7D%7BQ_%7BPFR%7D%7D%20%3D%20%5Cdfrac%7B1%7D%7Bk%7D%20%5CBig%20%5B%20In%20%28%20%5Cdfrac%7BC_o%7D%7BC_e%7D%29%20%5CBig%20%5D)
![\dfrac{V_{PFR}}{Q_{PFR}} = \dfrac{1}{5.09} \Big [ In ( \dfrac{200}{102.96}) \Big ]](https://tex.z-dn.net/?f=%5Cdfrac%7BV_%7BPFR%7D%7D%7BQ_%7BPFR%7D%7D%20%3D%20%5Cdfrac%7B1%7D%7B5.09%7D%20%5CBig%20%5B%20In%20%28%20%5Cdfrac%7B200%7D%7B102.96%7D%29%20%5CBig%20%5D)
![\dfrac{V_{PFR}}{Q_{PFR}} =0.196 \Big [ In ( 1.942) \Big ]](https://tex.z-dn.net/?f=%5Cdfrac%7BV_%7BPFR%7D%7D%7BQ_%7BPFR%7D%7D%20%3D0.196%20%5CBig%20%5B%20In%20%28%201.942%29%20%5CBig%20%5D)





The volume of the PFR is ≅ 140 m³
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Sandy would reach an incorrect outcome.that's because she will repeat this mistake in the future too.