Answer:
The answer is the 3rd option!
Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
Respon
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Yes that looks correct to me. good luck!!
Answer:
Let I and j be the unit vector along x and y axis respectively.
Electric field at origin is given by
E= kq1/r1^2 i + kq2/r2^2j
= 9*10^9*1.6*10^-19*/10^-6*(2i+ j)
= (2.88i + 1.44j)*10^-3 N/C
Force on charge= qE= 3*10^-19*1.6*(2.88i +1. 44 j) *10^-3
F= (1.382 i + 0.691 j) *10^-21
Goodluck
Explanation:
