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2 years ago

Type the correct answer in the box. Spell all words correctly.

Engineering

2 answers:

sesenic [268]2 years ago

6 0

Answer:

Chemical Engineers use chemistry, math and physics to design and use to make chemical products. The fibers in clothing are designed by chemical engineers.

Arlecino [84]2 years ago

6 0

Answer:

Textile engineering

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Shear _______ can be directly computed from the angle of twist and the specimen dimensions. (a)- Stress (b)- Modulus (c)- Strain

fgiga [73]

Answer:

c) Strain

Explanation:

For example, the shear strain “γ” on the surface of the rod is determined by measuring the relative angle of twist “φg” over a gage length “Lg”.

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2 years ago

A long rod of 60-mm diameter and thermophysical properties rho= 8000 kg/m3, c= 500 J/kg·K, and k= 50 W/m·K is initially at a uni

Dvinal [7]

Answer:

Tc = = 424.85 K

Explanation:

Data given:

D = 60 mm = 0.06 m

$\rho = 8000 kg/m^3$

k = 50 w/m . k

c = 500 j/kg.k

$h_{\infty} = 1000 w/m^2$

$t_{\infity} = 750 k$

$t_w = 500 K$

$surface area = As = \pi dL$

$\frac{As}{L} = \pi D = \pi \timeS 0.06$

HEAT FLOW Q is

$Q = h_{\infty} As (T_[\infty} - Tw)$

$= 1000 \pi\times 0.06 (750-500)$

= 47123.88 w per unit length of rod

volumetric heat rate

$q = \frac{Q}{LAs}$

$= \frac{47123.88}{\frac{\pi}{4} D^2 \times 1}$

$q = 1.66\times 10^{7} w/m^3$

$Tc = \frac{- qR^2}{4K} + Tw$

$= \frac{ - 1.67\times 10^7 \times (\frac{0.06}{2})^2}{4\times 56} + 500$

= 424.85 K

7 0

3 years ago

According to one government agency, bad housekeeping is estimated to cause what percentage

muminat

It’s 50 percent 99 percent sure

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2 years ago

(a) In your own words, explain how donor impurities in semiconductors give rise to free electrons in numbers in excess of those

Kazeer [188]

Answer:

A. N type impurities

B. P type impurities

Explanation:

A. The impurities contribute free electrons and changing the conducting property of the semi conductor. When a pentavalent impurities in a semi conductor( impurities with five valence electron) , the impurity atom replace some of the semi conductor atoms in the crystal structure where 4 of the valence electron would be involved in bonding of 4 neighbouring semiconductor while leaving the fifth electron to be free(negative charge carrier) which is available for detachment.

B. When a trivalence impurity is added to semiconductor, instead of excess electron, there will be excess hole created by crystals. Reason for this attribute is the trivalence atom will replace some tetra valence semiconductor atom, when three valence electrons of the 3 valence electrons of the trivalent impurity atom make bond with three neighbouring semiconductor which gives rise to lack of electron in the bond of the fourth neighbouring semiconductor which contribute a whole to the crystalline since trivalent impurity contribute excess holes to the crystal of semi conductor, this holes can accept electrons.

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2 years ago

An electron is traveling with initial kinetic energy K in a uniform electric field. The electron comes to rest momentarily after

KIM [24]

Answer:

The answer is below

Explanation:

a) The work done is equal to the loss in kinetic energy (KE)

Change in kinetic energy (ΔKE) = Final kinetic energy - initial kinetic energy

Final KE = $\frac{1}{2}mv_f^2$

But the final velocity is 0 (at rest). Hence:

Final KE = $\frac{1}{2}mv_f^2=\frac{1}{2}m(0)^2=0$

ΔKE = 0 - K = -K

W = ΔKE = -K

Also, the work done (W) = charge (q) * distance (d) * electric field intensity (E)

W = qEd

but q = -e, hence:

W = -e * E * d

Using:

W = ΔKE

-e * E * d = -K

E= K / (e * d)

b) The electric field is in the direction of the electrons motion

7 0

2 years ago