Question

1. A silicon BJT is connected as shown in Fig 1, where RC = 3.6 k 2. VBE = 0.8 V. (10%)

Answer 1

Answer:

The circuit is missing attached below is the required circuit

answer :

a) Ic = 1.944 mA

  Rp = 288.66 kΩ

b) The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased

Explanation:

Rc = 3.6 kΩ

VBE = 0.8 v

1) predict Ic and specify Rp to establish Vce at 5 V

we will apply Kirchhoff's voltage law to resolve this

solution attached below

b ) The BJT is said to be in Forward reverse bias because The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased