1. A silicon BJT is connected as shown in Fig 1, where RC = 3.6 k 2. VBE = 0.8 V. (10%)
1 answer:
Answer:
The circuit is missing attached below is the required circuit
answer :
a) Ic = 1.944 mA
Rp = 288.66 kΩ
b) <em>The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased</em>
Explanation:
Rc = 3.6 kΩ
VBE = 0.8 v
<u>1) predict Ic and specify Rp to establish Vce at 5 V </u>
we will apply Kirchhoff's voltage law to resolve this
solution attached below
b ) The BJT is said to be in Forward reverse bias because <em>The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased</em>
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where the first term is the resultant of the forces acting on the body, m is the mass of the object and a its acceleration, we see that if no forces act on the object, then the acceleration is zero. Therefore, the acceleration of the object is zero, and its velocity remains constant.