Answer:B. Increased the amount of charge.
Explanation:
Explanation:
we are not given the pressure change, check yhe question please
Answer:
I = 8.75 kg m
Explanation:
This is a rotational movement exercise, let's start with kinetic energy
K = ½ I w²
They tell us that K = 330 J, let's find the angular velocity with kinematics
w² = w₀² + 2 α θ
as part of rest w₀ = 0
w = √ 2α θ
let's reduce the revolutions to the SI system
θ = 30.0 rev (2π rad / 1 rev) = 60π rad
let's calculate the angular velocity
w = √(2 0.200 60π)
w = 8.683 rad / s
we clear from the first equation
I = 2K / w²
let's calculate
I = 2 330 / 8,683²
I = 8.75 kg m
Answer:
The structure of Germanium crystals will be destroyed at higher temperature. However, Silicon crystals are not easily damaged by excess heat. Peak Inverse Voltage ratings of Silicon diodes are greater than Germanium diodes. Si is less expensive due to the greater abundance of element.
The horizontal velocity<span> of a projectile is </span>constant<span> (a never </span>changing<span> in value), There is a </span>vertical<span>acceleration caused by gravity; its value is 9.8 m/s/s, down, The </span>vertical velocity<span> of a projectile </span>changes<span> by 9.8 m/s each second, The </span>horizontal<span> motion of a projectile is independent of its </span>vertical<span> motion.</span>
