Answer:
nothing much what class r u in
Answer:
Below see details
Explanation:
A) It is attached. Please see the picture
B) First to calculate the overall mean,
μ=65∗25/75+80∗25/75+95∗25/75
μ=65∗25/75+80∗25/75+95∗25/75 = 80
Next to calculate E(MSTR) = σ2+(1/r−1) ∑ni(μi−μ)^2 = 5634
And E(MSE) = σ^2= 9
C) Yes, it is substantially large than E(MSE) in this case.
D) If we sampled 25 employees from each group, we are likely to get a F statistics to indicate differences of job satisfactions among three types of length of service of employees.
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
>
because
> Vt. - By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.
Answer: P = I2R = 0.032 x 1000 =0.9 W
Explanation: The power will be the product of the square of the current and
the resistance of the load. The fact that the circuit is a parallel circuit is irrelevant to this question.