Answer:a
a) Vo/Vi = - 3.4
b) Vo/Vi = - 14.8
c) Vo/Vi = - 1000
Explanation:
a)
R1 = 17kΩ
for ideal op-amp
Va≈Vb=0 so Va=0
(Va - Vi)/5kΩ + (Va -Vo)/17kΩ = 0
sin we know Va≈Vb=0
so
-Vi/5kΩ + -Vo/17kΩ = 0
Vo/Vi = - 17k/5k
Vo/Vi = -3.4
║Vo/Vi ║ = 3.4 ( negative sign phase inversion)
b)
R2 = 74kΩ
for ideal op-amp
Va≈Vb=0 so Va=0
so
(Va-Vi)/5kΩ + (Va-Vo)74kΩ = 0
-Vi/5kΩ + -Vo/74kΩ = 0
Vo/Vi = - 74kΩ/5kΩ
Vo/Vi = - 14.8
║Vo/Vi ║ = 14.8 ( negative sign phase inversion)
c)
Also for ideal op-amp
Va≈Vb=0 so Va=0
Now for position 3 we apply nodal analysis we got at position 1
(Va - Vi)/5kΩ + (Va - Vo)/5000kΩ = 0 ( 5MΩ = 5000kΩ )
so
-Vi/5kΩ + -Vo/5000kΩ = 0
Vo/Vi = - 5000kΩ/5kΩ
Vo/Vi = - 1000
║Vo/Vi ║ = 1000 ( negative sign phase inversion)
Answer:
T = 15 kN
F = 23.33 kN
Explanation:
Given the data in the question,
We apply the impulse momentum principle on the total system,
mv₁ + ∑
= mv₂
we substitute
[50 + 3(30)]×10³ × 0 + FΔt = [50 + 3(30)]×10³ × ( 45 × 1000 / 3600 )
F( 75 - 0 ) = 1.75 × 10⁶
The resultant frictional tractive force F is will then be;
F = 1.75 × 10⁶ / 75
F = 23333.33 N
F = 23.33 kN
Applying the impulse momentum principle on the three cars;
mv₁ + ∑
= mv₂
[3(30)]×10³ × 0 + FΔt = [3(30)]×10³ × ( 45 × 1000 / 3600 )
F(75-0) = 1.125 × 10⁶
The force T developed is then;
T = 1.125 × 10⁶ / 75
T = 15000 N
T = 15 kN
Answer:

Explanation:
From the question we are told that:
Temperature of silicon 
Electron concentration 
Electron diffusion coefficient is
Electron mobility is 
Electron current density 
Generally the equation for the semiconductor is mathematically given by

Therefore


