Answer:
answer for the question :
The ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than 0.15 for uniform etching. Suppose a 200 mm diameter silicon wafer is etched at a rate of 50.0 nm/min in a CF4 plasma.(a) How many Si atoms are removed per minute?(b) What evolution rate of SiF4 does this correspond to in standard cubic centimeters per minute?(c) What minimum flow rate of CF4 should be maintained? "
is explained in the attachment.
Explanation:
Answer:
451 kj/kg
Explanation:
Velocity = 139m/s
Temperature = 70⁰C
T = 343K
M1 = v/√prt
= 130/√1.4x287x343
= 130/√137817.4
= 130/371.2
= 0.350
T1/To1 = 0.9760
From here we cross multiply and then make To1 the subject of the formula
To1 = T1/0.9760
To1 = 343/0.9760
To1 = 351.43
Then we go to the rayleigh table
At m = 0.35
To1/To* = 0.4389
To* = 351.43/0.4389
= 800k
M2 = 1
Maximum amount of heat
1.005(800-351.43)
= 450.8kj/kg
= 452kj/kg
Hello there,
In the problems given in the question, the driver's license is confiscated and suspended.
So our answer is: A)
Achievements.
Answer:
final pressure = 200KPa or 29.138psia
Explanation:
The detailed step by step calculations with appropriate conversion factors applied are as shown in the attachment.
