Answer: A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor creating a potential barrier voltage across the diode junction
Explanation: hope this helped
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Answer:
Sorry, I don't understand this language, sorry dear
I’m just a answering for points sorry
We are given with conditions on temperature, pressure and volume of gas. In this problem, we apply ideal gas law PV = nRT to solve what are asked.
1. PV = nRT ; n = m/MM
16.5 x10^6 Pa * 0.003785 m3= n * 8.314 Pa m^3/ mol K * (23+273) K
n = 25.38 mol; mass = 812.08 grams.
2. V at STP is 22.4 L/mol
3. PV = nRT = 1.5 atm * 0.003785 *1000 L = <span>25.38 mol * 0.0821 L atm/mol K * T ; T = 2.72 K
4. P * 55 m3/1000 = 25.38 mol * </span><span>8.314 Pa m^3/ mol K</span><span> * (24+273) K
P = 1139. 45 kPa</span>
