Difference between Datum and Datum feature is<em> 'Datum is theoretical and Datum feature is real'.
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Option: (b)
<u>Explanation:</u>
A Datum is a perfect plane, line, point or surface but only occurs theoretically.
However a Datum Feature is fully based on a tangible surface, axis or point on a part where that theoretical datum is located.
The reason behind in this is they are not equal to each other because the 'part surface' is never 100% perfect.
The important functional features of the Datum is controlled during measurements.
Answer:
See attachment and explanation.
Explanation:
- The following question can be solved better with the help of a MATLAB program as follows. The code is given in the attachment.
- The plot of the graph is given in attachment.
- The code covers the entire spectrum of the poly-tropic range ( 1.2 - 1.6 ) and 20 steps ( cases ) have been plotted and compared in the attached plot.
Answer:
It will be equivalent to 338.95 N-m
Explanation:
We have to convert 250 lb-ft to N-m
We know that 1 lb = 4.45 N
So foe converting from lb to N we have to multiply with 4.45
So 250 lb = 250×4.45 =125 N
And we know that 1 feet = 0.3048 meter
Now we have to convert 250 lb-ft to N-m
So 
So 250 lb-ft = 338.95 N-m
Answer:
a) 3581.15067 kw
b) 95.4%
Explanation:
<u>Given data:</u>
compressor efficiency = 85%
compressor pressure ratio = 10
Air enters at: flow rate of 5m^3/s , pressure = 100kPa, temperature = 300 K
At turbine inlet : pressure = 950 kPa, temperature = 1400k
Turbine efficiency = 88% , exit pressure of turbine = 100 kPa
A) Develop a full accounting of the exergy increase of the air passing through the gas turbine combustor in kW
attached below is a detailed solution to the given question
Answer:
hello your question is incomplete attached below is the missing part of the question
Consider an inverter operating a power supply voltage VDD. Assume that matched condition for this inverter. Make the necessary assumptions to get to an answer for the following questions.
answer : Nd ∝ rt
Explanation:
Determine how the delay and active power per device will change as the doping density of N- and P-MOSFET increases
Pactive ( active power ) = Efs * F
Pactive =
also note that ; Pactive ∝ Nd2 (
tD = K .
since K = constant
Hence : Nd ∝ rt