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Leviafan [203]
3 years ago
7

The design-bid-build model is prons to abuse because separation of phases facilitates the hiding of corrupt practices.

Engineering
2 answers:
Romashka-Z-Leto [24]3 years ago
6 0
I believe it is true
frutty [35]3 years ago
5 0
I think the answer is true
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romanna [79]
Why 1+12+ Y3 < 1100
Says the state of university Need to purchase 1100 computers in total, we have the following answer on the way top
3 0
3 years ago
Is it possible that two types of dislocation coexist. a)-True b)- False
Svetlanka [38]

Answer:

yes it is possible

Explanation:

dislocation are if two type edge and screw dislocations

edge dislocation is a defect where an extra half plane is inside the lattice.

and screw dislocation is one in which can be assumed as the first half of the crystal slips over another.

These dislocation can coexist together where the line direction and burger vectors are  neither parallel nor perpendicular then at that condition both dislocation screw and edge will coexist

3 0
3 years ago
An aluminum bar 125 mm long with a square cross section 16 mm on an edge is pulled in tension with a load of 66,700 N and experi
AfilCa [17]

Answer: the modulus of elasticity of the aluminum is 75740.37 MPa

Explanation:

Given that;

Length of Aluminum bar L = 125 mm

square cross section s = 16 mm

so area of cross section of the aluminum bar is;

A = s² = 16² = 256 mm²

Tensile load acting the bar p = 66,700 N

elongation produced Δ = 0.43

so

Δ = PL / AE

we substitute

0.43 = (66,700 × 125) / (256 × E)

0.43(256 × E) = (66,700 × 125)

110.08E = 8337500

E = 8337500 / 110.08

E = 75740.37 MPa

Therefore, the modulus of elasticity of the aluminum is 75740.37 MPa

4 0
3 years ago
Draw a 3-D physical structure of an NMOS transistor. Label four terminals: body, drain, gate, and source. And also label silicon
Vanyuwa [196]

Answer:

Answer is attached.

Explanation:

A NMOS is a n-channel MOSFET or Metal Oxide

Semiconductor Field Effect Transistor. This type

of transistor might be an enhancement or

depletion type nMOS transistor designed using

layers of Metal-oxide, Silicon-oxide and Silicon

fabricated on a substrate.

4 0
3 years ago
PLEASE HELP, TEST MULTIPLE CHOICE QUESTIONS
Rina8888 [55]

Answer:

c

Explanation:

dbfjex vadamhqrmtwg

8 0
3 years ago
Read 2 more answers
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