Calculate the areas under the stress-strain curve (toughness) for the materials shown in Fig. below, (a) plot them as a
1 answer:
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Answer:
Explanation:
From the question we are told that:
Temperature of silicon
Electron concentration
Electron diffusion coefficient is
Electron mobility is
Electron current density
Generally the equation for the semiconductor is mathematically given by
Therefore
Answer:
The answer is as given in the explanation.
Explanation:
The 1st thing to notice is the assumptions required. Thus as the diameter of the cylinder and the wind tunnel are given such that the difference is of the orders of the magnitude thus the assumptions as given below are validated.
- Flow is entirely laminar, there's no boundary layer release.
- Flow is streamlined, ie, it follows the geometrical path imposed by the curvature.
By D'alembert's paradox, "The net pressure drag exerted on a circular cylinder that moves in an inviscid fluid of large extent is identically zero".Just in the surface of the cylinder, the velocity profile can be given in the next equation:
And the pressure P on the surface of cylinder is given by Bernoulli's equation along the streamline through that point:
where P_∞ is Pressure at stagnation point, U is the velocity given, ρ is the density of the fluid (in this case air) and θ is the angle measured from the center of cylinder to the adjacent point where your pressure point will be determine.