M <span>represent mass in kg
</span><span>v represents speed in m/s
</span><span>r represents radius in m
Now, just substitute these into the formula:
</span>

<span>
</span>
Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
Answer
given,
focal length of lens A = 5.77 cm
focal length of lens B= 27.9 cm
flies distance from mirror = 11.3 m
now,
Using lens formula
q =11.79 cm
image of lens A is object of lens B
distance of lens = 59.9 - 11.79 = 48.11
now, Again applying lens formula
q' =66.41 cm
hence, the image distance from the second lens is equal to q' =66.41 cm
Answer:
power emitted is 1.75 W
Explanation:
given data
length l = 5 cm = 5 ×
m
diameter d = 0.074 cm = 74 ×
m
total filament emissivity = 0.300
temperature = 3068 K
to find out
power emitted
solution
we find first area that is π×d×L
area = π×d×L
area = π×74 ×
×5 ×
area = 1162.3892 ×
m²
so here power emitted is express as
power emitted = E × σ × area × (temperature)^4
put here all value
power emitted = 0.300× 5.67 × 1162.3892 ×
× (3068)^4
power emitted = 1.75 W