Answer:
Made of Silicon.
Explanation:
A diode is a semiconductor device use in mostly electronic appliances. It is two terminals device consisting of a P-N junction formed either in Germanium or silicon crystal.
Diode can be forward biased or reverse biased.
When a diode is forward biased and the applied voltage is increased from zero, hardly any current flows through the device in the beginning.
It is so because the external voltage is being opposed by the internal barrier voltage whose value is 0.7v for silicon and 0.3v for germanium.
If you measure 0.7 V across a diode, the diode is probably therefore made of Silicon.
Attached is the solution to the above question.
Answer:
Explanation:
Given conditions
1)The stress on the blade is 100 MPa
2)The yield strength of the blade is 175 MPa
3)The Young’s modulus for the blade is 50 GPa
4)The strain contributed by the primary creep regime (not including the initial elastic strain) was 0.25 % or 0.0025 strain, and this strain was realized in the first 4 hours.
5)The temperature of the blade is 800°C.
6)The formula for the creep rate in the steady-state regime is dε /dt = 1 x 10-5 σ4 exp (-2 eV/kT)
where: dε /dt is in cm/cm-hr σ is in MPa T is in Kelvink = 8.62 x 10-5 eV/K
Young Modulus, E = Stress,
/Strain, ∈
initial Strain, 


creep rate in the steady state


but Tinitial = 0


solving the above equation,
we get
Tfinal = 2459.82 hr
Answer:
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Answer:
Explanation:
The detailed steps is as shown in the attachment.