"<span>H-C=N:" is the one answer among the choices given in the question that shows the correct dot diagram. The correct option among all the options that are given in the question is the fourth option or option "D". The other choices can be neglected. I hope that this is the answer that has come to your help.</span>
Kinetic energy = 1/2 * mass * velocity^2
In this case,
KE = 1/2 * 1569 kg * (15 (m/s))^2 = 176,5 kN
Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
Answer: Option B: 1.3×10⁵ W
Explanation:
Work Done, 
Where s is displacement in the direction of force and F is force.
where, v is the velocity.
It is given that, F = 5.75 × 10³N
v = 22 m/s
P = 5.75 × 10³N×22 m/s = 126.5 × 10³ W ≈1.3×10⁵W
Thus, the correct option is B
